2sj493.pdf datasheet:

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ493SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SJ493 Isolated TO-220FEATURES Super low on-state resistanceRDS(on)1 = 100 m (MAX.) (VGS = 10 V, ID = 8 A)RDS(on)2 = 185 m (MAX.) (VGS = 4 V, ID = 8 A) Low Ciss: Ciss = 1210 pF (TYP.) Built-in gate protection diodeABSOLUTE MAXIMUM RATINGS (TA = 25C)Drain to Source Voltage (VGS = 0 V) VDSS 60 VGate to Source Voltage (VDS = 0 V) VGSS(AC) 20 VGate to Source Voltage (VDS = 0 V) Note1 VGSS(DC) 20, 0 VDrain Current (DC) ID(DC) 16 ADrain Current (pulse) Note2 ID(pulse) 64 ATotal Power Dissipation (TC = 25C) PT 30 WTotal Power Dissipation (TA = 25C) PT 2.0 WChannel T