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2sj541.pdf datasheet:

2sj5412sj541

2SJ541 Silicon P Channel MOS FET REJ03G0888-0400 (Previous: ADE-208-590B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.075 typ. Low drive current. 4 V gate drive devices. High speed switching. Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. GateG2. Drain (Flange)3. Source123SRev.4.00 Sep 07, 2005 page 1 of 7 2SJ541 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 15 ADDrain peak current I Note 1 60 AD (pulse)Body to drain diode reverse drain current I 15 ADRAvalanche current I Note 3 15 AAPAvalanche energy E Note 3 19 mJARChannel dissipation Pch Note 2 50 WChannel temperature Tch 150 C

 

Keywords - ALL TRANSISTORS DATASHEET

 2sj541.pdf Design, MOSFET, Power

 2sj541.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj541.pdf Database, Innovation, IC, Electricity

 

 
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