2sj549.pdf datasheet:

2SJ549(L), 2SJ549(S) Silicon P Channel MOS FET REJ03G0896-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features Low on-resistance RDS (on) = 0.11 typ. Low drive current 4 V gate drive devices High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) )D441. Gate2. DrainG3. Source4. Drain123123SRev.4.00 Jun 05, 2006 page 1 of 8 2SJ549(L), 2SJ549(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 12 ADrain peak current ID (pulse) Note 1 48 ABody to drain diode reverse drain current IDR 12 AAvalanche current IAP Note 3 12 AAvalanche energy EAR Note 3 12 mJChan