2sj670.pdf datasheet:
Ordering number : EN8354A 2SJ670SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching Device2SJ670ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID --1.5 ADrain Current (Pulse) IDP PW10s, duty cycle1% --6 AMounted on a ceramic board (600mm2 0.8mm) 1.5 WAllowable Power Dissipation PDTc=25C 3.5 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at Ta=25C RatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --100 VZero-Gate Voltage Drain Current IDSS VDS=--100V, VGS=0V --1 A
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