2sj673.pdf datasheet:

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ673SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ673 is P-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SJ673 Isolated TO-220 (MP-45F) FEATURES Super low on-state resistance (Isolated TO-220) RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -18 A) RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -18 A) Low C iss: C iss = 4600 pF TYP. Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS -60 VGate to Source Voltage (VDS = 0 V) VGSS m20 VDrain Current (DC) (TC = 25C) ID(DC) m36 ADrain Current (pulse) Note1 ID(pulse) m144 ATotal Power Dissipation (TC = 25C) PT1 32 WTotal Power Dissipation (TA = 25C) PT2 2.0 WChannel Temperature Tch 150 CStorage