2sk1478.pdf datasheet:

isc N-Channel MOSFET Transistor 2SK1478DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 250 VDSS GSV Gate-Source Voltage 20 VGSI Drain Current-continuous@ TC=25 8 ADP Total Dissipation@TC=25 40 WtotT Max. Operating Junction Temperature 150 jT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc N-Channel Mosfet Transistor 2SK1478ELECTRICAL CHARACTERISTICS (T =25)CSYMBOL PARAMETER CONDITIONS MIN MAX UNITTYPV Drain-Source Breakdown Voltage V =0; I = 1mA 250 V(BR)DSS GS DV Gate Threshold Voltage V

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