2sk1478.pdf datasheet:

Power F-MOS FETs 2SK14782SK1478Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on)= 0.4(typ)5.5 0.2 2.7 0.2High-speed switching : tf = 44ns(typ)No secondary breakdown3.1 0.1High breakdown voltage, large allowable power dissipation Applications1.3 0.2Non-contact relay1.4 0.1Solenoid drive+0.20.5 -0.1 0.8 0.1Motor driveControl equipment2.54 0.25Switching mode regulator5.08 0.51 2 3 Absolute Maximum Ratings (Tc = 25C)1 : GateParameter Symbol Rating Unit2 : Drain3 : SourceDrain-Source breakdown voltage VDSS 250 VTO-220 Full Pack Package (a)Gate-Source voltage VGSS 20 VDC ID 8 ADrain currentPulse IDP 16 ATC =25C 40Allowable powerPD WdissipationTa =25C 2Channel temperature Tch 150 CStorage temperature Tstg 55 to 150