2sk2403.pdf datasheet:

Ordering number : EN86022SK2403SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2403ApplicationsFeatures Built-in FRD. 10V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 450 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 3 ADrain Current (Pulse) IDP PW10s, duty cycle1% 12 A1.65 WAllowable Power Dissipation PDTc=25C50 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 450 VZero-Gate Voltage Drain Current IDSS VDS=450V, VGS=0V 1.0 mAGate-to-Source Leakage Current IGSS VGS= 30V, VDS=0V 100 nACutoff Voltage VGS(off) VDS