2sk3608-01l-s-sj.pdf datasheet:

2SK3608-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETSuper FAP-G SeriesOutline Drawings (mm)FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofP4ApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless otherwise specified)Item Symbol Ratings UnitDrain-source voltage VDS 200 VVDSX *5 170 VEquivalent circuit schematicContinuous drain current ID 18 APulsed drain current ID(puls] 72 AGate-source voltage VGS 30 V Drain(D)Non-repetitive Avalanche current IAS *2 18 AMaximum Avalanche Energy EAS *1 125.5 mJMaximum Drain-Source dV/dt dVDS/dt *4 20 kV/sPeak Diode Recovery dV/dt dV/dt *3 5 kV/sGate(G)Max. power dissipation PD Ta=25C 1.67WSource(S)Tc=25C 1