2sk3609-01.pdf datasheet:

2SK3609-01200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings (mm)Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratingsFoot Print Pattern(Tc=25C unless otherwise specified)Item Symbol Ratings UnitEquivalent circuit schematic VDrain-source voltage VDS 200 VVDSX *5 170 AContinuous drain current ID Tc=25C 18D : Drain ATa=25C 2.7 ** APulsed drain current ID(puls] 72G : Gate VGate-source voltage VGS 30 ANon-repetitive Avalanche current IAS *2 18 mJMaximum Avalanche Energy EAS *1 125.5S1 : SourcekV/sMaximum Drain-Source dV/dt dVDS/dt *4 20S2 : SourcePeak Diode Recovery dV