2sk369.pdf datasheet:

2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. High |Y |: |Y | = 40 mS (typ.) (V = 10 V, V = 0, I = 5 mA) fs fs DS GS DSS High breakdown voltage: V = -40 V (min) GDS Super low noise: NF = 1.0dB (typ.) (V = 10 V, I = 5 mA, f = 1 kHz, R = 100 ) DS D G High input impedance: I = -1 nA (max) (V = -30 V) GSS GSMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitGate-drain voltage VGDS -40 VGate current IG 10 mADrain power dissipation PD 400 mWJunction temperature Tj 125 CStorage temperature range Tstg -55~125 CJEDEC TO-92 JEITA SC-43TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Electrical Characteristics (Ta == 25C) ==Characteristics Symbol Test