2sk3844.pdf datasheet:
2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK3844 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.1 m (typ.) High forward transfer admittance: |Yfs| = 63 S (typ.) Low leakage current: IDSS = 100 A (max)(VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 60 VDrain-gate voltage (RGS = 20 k) VDGR 60 VGate-source voltage VGSS 20 VID 45DC (Note 1)Drain current A IDP 180 Pulse (Note 1) JEDEC Drain power dissipation (Tc=25) PD 45 WSingle pulse avalanche energy JEITA SC-67EAS 527 mJ(Note 2)TOSHIBA 2-10R1BAvalanche current IAR 45 AWeight: 1.9 g (typ.) Repetitive avalanche e
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