2sk3845.pdf datasheet:

2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.7 m (typ.) High forward transfer admittance: |Yfs| = 88 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS 60 VDrain-gate voltage (RGS = 20 k) VDGR 60 VGate-source voltage VGSS 20 V1. GATE DC (Note 1) ID 70Drain current A 2. DRAIN (HEAT SINK) Pulse (Note 1) IDP 2803. SOURCE Drain power dissipation (Tc = 25C) PD 125 WSingle pulse avalanche energy JEDEC EAS 328 mJ(Note 2)JEITA Avalanche current IAR 70 ARepetitive a