2sk3900.pdf datasheet:

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3900SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3900-ZP TO-263 (MP-25ZP)FEATURES Super low on-state resistance (TO-263) RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 m MAX. (VGS = 4.5 V, ID = 41 A) Low C iss: C iss = 3500 pF TYP. Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) VDSS 60 VGate to Source Voltage (VDS = 0 V) VGSS 20 VDrain Current (DC) (TC = 25C) ID(DC) 82 ADrain Current (pulse) Note1 ID(pulse) 246 ATotal Power Dissipation (TC = 25C) PT1 104 WTotal Power Dissipation (TA = 25C) PT2 1.5 WChannel Temperature Tch 150 CStorage Temperature