2sk4125.pdf datasheet:

Ordering number : ENA0747A 2SK4125SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK4125ApplicationsFeatures Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 17 ADrain Current (Pulse) IDP PW10s, duty cycle1% 52 A2.5 WAllowable Power Dissipation PDTc=25C (SANYOs ideal heat dissipation condition)*1 170 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CAvalanche Energy (Single Pulse) *2 EAS 86.5 mJAvalanche Current *3 IAV 17 A*1 SANYOs condition is radiation from backside.The method

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