3dd200.pdf datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD200DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEODC Current Gain-: h = 30~120(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 3ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B&W TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 100 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 3 ACP Collector Power Dissipation@T =75 30 WC CT Junction Temperature 150 JT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 1.5 /WRth j-c1isc website