3dd201.pdf datasheet:

isc Silicon NPN Power Transistor 3DD201DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEODC Current Gain-: h = 40~120(Min.)@I = 2AFE CCollector-Emitter Saturation Voltage-: V )= 1.5V(Max)@ I = 5ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 350 VCBOV Collector-Emitter Voltage 150 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 8 ACP Collector Power Dissipation@T =25 50 WC CT Junction Temperature 150 JT Storage Temperature -55~150 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance,Junction to Case 1.5 /WRth j-c1isc website isc & iscsemi is registe