3dd209l.pdf datasheet:

isc Silicon NPN Power Transistor 3DD209LDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lightElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 700 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 9 VEBOI Collector Current-Continuous 12 ACP Collector Power Dissipation@T =25 120 WC CT Junction Temperature 150 JT Storage Temperature -55~150 stg1isc websitewww.iscsemi.cn isc & iscsemi is registered trademarkisc Silicon NPN Power Transistors 3DD209LELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER

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