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am3411pe.pdf datasheet:

am3411peam3411pe

Analog Power AM3411PEP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) () ID (A)power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7applications are DC-DC converters and -200.057 @ VGS = -2.5V -4.9power management in portable and battery-powered products such as computers, printers, cellular and cordless telephones. Low rDS(on) provides higher efficiency and 1 6extends battery life Low thermal impedance copper leadframe 2 5TSOP-6 saves board space Fast switching speed3 4 High performance trench technologyESD ProtectedABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)Parameter Symbol Maximum UnitsDrain-Source Voltage VDS -20VGate-Source Voltage V 8GS

 

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 am3411pe.pdf Design, MOSFET, Power

 am3411pe.pdf RoHS Compliant, Service, Triacs, Semiconductor

 am3411pe.pdf Database, Innovation, IC, Electricity

 

 
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