aot282l.pdf datasheet:

isc N-Channel MOSFET Transistor AOT282LFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80 VDSSV Gate-Source Voltage 20 VGSSDrain Current-Continuous;@Tc=25105I AD82Tc=100I Drain Current-Single Pulsed 420 ADMP Total Dissipation 272.5 WDT Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.55/WRth(ch-a) Channel-to-ambient thermal resistance 601isc websiteww

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