aot286l.pdf datasheet:

isc N-Channel MOSFET Transistor AOT286LFEATURESStatic drain-source on-resistance:RDS(on) 6mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSBe ideal for boost converters and synchronous rectifiers forconsumer, telecom, industrial power supplies and LED backlighting.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 80 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 70 ADI Drain Current-Single Pulsed 245 ADMP Total Dissipation @T =25 167 WD CT Max. Operating Junction Temperature 175 jT Storage Temperature -55~175 stgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 0.91isc websitewww.iscsemi.cn isc & iscsemi