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apt8030b2vr.pdf datasheet:

apt8030b2vrapt8030b2vr

APT8030B2VR800V 27A 0.300POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower Leakage New T-MAX PackageG(Clip-mounted TO-247 Package)SMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT8030B2VR UNITVDSS Drain-Source Voltage800 VoltsID Continuous Drain Current @ TC = 25C27AmpsIDM Pulsed Drain Current 1108VGS Gate-Source Voltage Continuous30VoltsVGSM Gate-Source Voltage Transient40Total Power Dissipation @ TC = 25C 520 WattsPDLinear Derating Factor 4.16 W/CTJ,TSTG Operating and

 

Keywords - ALL TRANSISTORS DATASHEET

 apt8030b2vr.pdf Design, MOSFET, Power

 apt8030b2vr.pdf RoHS Compliant, Service, Triacs, Semiconductor

 apt8030b2vr.pdf Database, Innovation, IC, Electricity

 

 
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