atp602.pdf datasheet:

ATP602Ordering number : ENA1543SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceATP602ApplicationsFeatures High-speed switching. 10V drive. Avalanche resistance guarantee. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 600 VGate-to-Source Voltage VGSS 30 VDrain Current (DC) ID 5 ADrain Current (Pulse) IDP PW10s, duty cycle1% 15 AAllowable Power Dissipation PD Tc=25C70 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CAvalanche Energy (Single Pulse) *1 EAS 74 mJAvalanche Current *2 IAV 5 ANote : *1 VDD=99V, L=5mH, IAV=5A *2 L 5mH, Single pulse at Ta=25CElectrical CharacteristicsRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-S

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