bc637 bc639 bc63916.pdf datasheet:

BC637, BC639, BC639-16High Current TransistorsNPN SiliconFeatures These are Pb-Free Devices* http://onsemi.comCOLLECTOR2MAXIMUM RATINGS3Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO VdcBC637 601BC639 80EMITTERCollector - Base Voltage VCBO VdcBC637 60BC639 80Emitter - Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1.0 AdcTO-92Total Device Dissipation @ TA = 25C PD 625 mW CASE 29Derate above 25C 5.0 mW/CSTYLE 14Total Device Dissipation @ TC = 25C PD 800 mW1Derate above 25C 12 mW/C12233Operating and Storage Junction TJ, Tstg -55 to +150 CSTRAIGHT LEAD BENT LEADTemperature RangeBULK PACK TAPE & REELAMMO PACKTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction-to-Ambient RqJA 200 C/WMARKING DIAGRAMSThermal Resistance, Junction-to-Cas