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bd951.pdf datasheet:

bd951bd951

isc Silicon NPN Power Transistor BD951DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = 500mAFE CComplement to Type BD952Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 5 ACI Collector Current-Peak 8 ACMCollector Power DissipationP 40 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -65~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITR Thermal Resistance,Junction to Case 3.12 /Wth j-cThermal Resistance,Junction to Ambient 70

 

Keywords - ALL TRANSISTORS DATASHEET

 bd951.pdf Design, MOSFET, Power

 bd951.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bd951.pdf Database, Innovation, IC, Electricity

 

 
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