btna44n3.pdf datasheet:

Spec. No. : C210N3-H Issued Date : 2003.06.12 CYStech Electronics Corp.Revised Date : 2010.07.14 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400VIC 300mABTNA44N3 RCESAT(typ.) 10 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. Complementary to BTPA94N3 Pb-free package Symbol Outline BTNA44N3SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C) Parameter Symbol Limit UnitCollector-Base Voltage VCBO 500 VCollector-Emitter Voltage VCEO 400 VEmitter-Base Voltage VEBO 6 VCollector Current IC 300 mAPower Dissipation PD 350 (Note) mWThermal Resistance, Junction to Ambient RJA 357 C/W Junction Temperature Tj 150 C Storage Temperature Tstg -55~+150 C Note : When mounted on a FR-5 board