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buz101.pdf datasheet:

buz101buz101

BUZ 101SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Low on-resistance 175C operating temperature also in TO-220 SMD availablePin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 101 50 V 29 A 0.06 TO-220 AB C67078-S1350-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 31 C 29Pulsed drain current IDpulsTC = 25 C 116Avalanche energy, single pulse EAS mJID = 29 A, VDD = 25 V, RGS = 25 L = 83 H, Tj = 25 C 70Reverse diode dv/dt dv/dt kV/sIS = 29 A, VDS = 40 V, diF/dt = 200 A/sTjmax = 175 C 6Gate source voltage VGS 20 VPower dissipation Ptot WTC = 25 C 100Operating temperature Tj -55 ... + 175 CStorage temperature Tstg -55 ... + 175Thermal resistance, chip case RthJC 1.5 K/WThermal resistance, ch

 

Keywords - ALL TRANSISTORS DATASHEET

 buz101.pdf Design, MOSFET, Power

 buz101.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz101.pdf Database, Innovation, IC, Electricity

 

 
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