buz101s.pdf datasheet:

BUZ 101SSIPMOS PowerTransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.05RDS(on) Enhancement modeContinuous drain current 22 AID Avalanche rated dv/dt rated 175 C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ101S P-TO220-3-1 Q67040-S4013-A2 TubeBUZ101S E3045A P-TO263-3-2 Q67040-S4013-A6 Tape and ReelBUZ101S E3045 P-TO263-3-2 Q67040-S4031-A5 TubeMaximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC =25C 22TC = 100 C 16Pulsed drain current 88IDpulseTC =25CAvalanche energy, single pulse 90 mJEASID =22A, VDD =25V, RGS =255.5Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt dv/dtIS =22A, VDS =40V, di/dt = 20

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