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buz11.pdf datasheet:

buz11buz11

BUZ11Data Sheet June 1999 File Number 2253.230A, 50V, 0.040 Ohm, N-Channel Power FeaturesMOSFET 30A, 50V[ /Title This is an N-Channel enhancement mode silicon gate power rDS(ON) = 0.040(BUZ1field effect transistor designed for applications such as SOA is Power Dissipation Limited1) switching regulators, switching converters, motor drivers, Nanosecond Switching Speedsrelay drivers and drivers for high power bipolar switching /Sub-transistors requiring high speed and low gate drive power. ject Linear Transfer CharacteristicsThis type can be operated directly from integrated circuits.(30A, High Input ImpedanceFormerly developmental type TA9771.50V, Majority Carrier Device0.040 Ordering Information Related LiteratureOhm, - TB334 Guidelines for Soldering Surface Mount PART NUMBER PACKAGE BRANDN-

 

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