buz111s.pdf datasheet:

BUZ 111SSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 55 VVDS N channelDrain-Source on-state resistance 0.008RDS(on) Enhancement modeContinuous drain current 80 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SBUZ111S P-TO220-3-1 Q67040-S4003-A2 TubeBUZ111S E3045A P-TO263-3-2 Q67040-S4003-A6 Tape and ReelBUZ111S E3045 P-TO263-3-2 Q67040-S4003-A5 TubeMaximum Ratings, at Tj = 25 C, unless otherwise specifiedParameter Symbol Value UnitContinuous drain current AIDTC = 25 C, 1) 80 TC = 100 C 80Pulsed drain current 320IDpulseTC = 25 CAvalanche energy, single pulse 700 mJEASID = 80 A, VDD = 25 V, RGS = 25 30 Avalanche energy, periodic limited by Tjmax EAR6 kV/sReverse diode dv/dt dv/dtIS = 80 A,