buz173.pdf datasheet:

BUZ 173SIPMOS Power Transistor P channel Enhancement mode Avalanche ratedPin 1 Pin 2 Pin 3G D SType VDS ID RDS(on) Package Ordering CodeBUZ 173 -200 V -3.6 A 1.5 TO-220 AB C67078-S1452-A2Maximum RatingsParameter Symbol Values UnitContinuous drain current ID ATC = 30 C -3.6Pulsed drain current IDpulsTC = 25 C -14Avalanche energy, single pulse EAS mJID = -3.6 A, VDD = -25 V, RGS = 25 L = 23 mH, Tj = 25 C 200Gate source voltage VGS 20 VPower dissipation Ptot WTC = 25 C 40Operating temperature Tj -55 ... + 150 CStorage temperature Tstg -55 ... + 150Thermal resistance, chip case RthJC 3.1 K/WThermal resistance, chip to ambient RthJA 75DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55 / 150 / 56Data Sheet 1 05.99BUZ 173Electrical Characteristics, at Tj = 25C, unless