cep02n65g ceb02n65g cef02n65g.pdf datasheet:

CEP02N65G/CEB02N65GCEF02N65GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N65G 650V 5.5 2A 10VCEB02N65G 650V 5.5 2A 10VCEF02N65G 650V 5.5 2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 650 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C 2 2 d AID@ TC = 100 C A1 1 dDrain Current-Pulsed a IDM e 8 8 d AMaximum Power Dissipation @ TC = 25 C 60 28 WPD- Derate above 25 C 0.48 0.22 W/ CSingle Pulsed Avalanche Energy g EAS 11.25 mJIAS 1.5 ASingle Pulsed Avalanche Current g Operatin