cep02n6a ceb02n6a cef02n6a.pdf datasheet:

CEP02N6A/CEB02N6ACEF02N6AN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N6A 600V 8.5 1.4A 10VCEB02N6A 600V 8.5 1.4A 10VCEF02N6A 600V 8.5 1.4A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GCEB SERIESCEP SERIES CEF SERIESSTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 600 VGate-Source Voltage VGS V30Drain Current-Continuous ID 1.4 1.4 d ADrain Current-Pulsed a IDM e 5.6 5.6 d AMaximum Power Dissipation @ TC = 25 C 41 27 WPD- Derate above 25 C 0.33 0.22 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resista