cep02n6g ceb02n6g cef02n6g.pdf datasheet:

CEP02N6G/CEB02N6GCEF02N6GN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP02N6G 600V 5 2.2A 10VCEB02N6G 600V 5 2.2A 10VCEF02N6G 600V 5 2.2A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 600 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C 2.2 2.2 d AID@ TC = 100 C A1.4 1.4dDrain Current-Pulsed a IDM e 8.8 8.8 d AMaximum Power Dissipation @ TC = 25 C 60 33 WPD- Derate above 25 C 0.48 0.26 W/ CSingle Pulsed Avalanche Energy g EAS 11.25 mJIAS 1.5 ASingle Pulsed Avalanche Current g Ope