cep10n4 ceb10n4 cei10n4 cef10n4.pdf datasheet:

CEP10N4/CEB10N4CEI10N4/CEF10N4N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP10N4 450V 0.7 10A 10VCEB10N4 450V 0.7 10A 10VCEI10N4 450V 0.7 10A 10VCEF10N4 450V 0.7 10A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.GSCEB SERIES CEI SERIES CEP SERIES CEF SERIESTO-263(DD-PAK) TO-262(I2-PAK) TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263/262 TO-220FDrain-Source Voltage VDS 450 VGate-Source Voltage VGS V30Drain Current-Continuous ID 10 10 e ADrain Current-Pulsed a IDM f 40 40 e AMaximum Power Dissipation @ TC = 25 C 125 45 WPD- Derate above 25 C 1.0 0.36 W/ CSingle