cep14a04 ceb14a04.pdf datasheet:

CEP14A04/CEB14A04N-Channel Enhancement Mode Field Effect TransistorFEATURES40V, 180A, RDS(ON) = 5m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 40 VGate-Source Voltage VGS 20 V180 AID@ TC = 25 CDrain Current-ContinuousID@ TC = 100 C 125 ADrain Current-Pulsed a IDM 720 AMaximum Power Dissipation @ TC = 25 C 200 WPD- Derate above 25 C 1.3 W/ CSingle Pulsed Avalanche Energy d EAS 633 mJSingle Pulsed Avalanche Current d IAS 65 ATJ,TstgOperating and Store Temperature Range -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistan