cep840a ceb840a cef840a.pdf datasheet:

CEP840A/CEB840ACEF840APRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP840A 500V 0.85 8.5A 10VCEB840A 500V 0.85 8.5A 10VCEF840A 500V 0.85 8.5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 500 VGate-Source Voltage VGS V30Drain Current-Continuous @ TC = 25 C 8.5 d A8.5ID@ TC = 100 C 6 6 d ADrain Current-Pulsed a IDM e 34 34 d AMaximum Power Dissipation @ TC = 25 C 150 48 WPD- Derate above 25 C0.3 W/ C1Single Pulsed Avalanche Energy h EAS 196 mJIASSingle Pulsed Avalanche Current