cep840g ceb840g cef840g.pdf datasheet:

CEP840G/CEB840G CEF840GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP840G 500V 0.85 8A 10VCEB840G 500V 0.85 8A 10VCEF840G 500V 0.85 8A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(DD-PAK) TO-220 TO-220FABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedLimitParameter Symbol UnitsTO-220/263 TO-220FDrain-Source Voltage VDS 500 VGate-Source Voltage VGS V30Drain Current-Continuous ID 8 8 e ADrain Current-Pulsed a IDM f 32 32 e AMaximum Power Dissipation @ TC = 25 C 125 40 WPD- Derate above 25 C 1.0 0.32 W/ COperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance,