ces2316.pdf datasheet:

CES2316N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 4.8A, RDS(ON) = 34m @VGS = 10V. RDS(ON) = 50m @VGS = 4.5V.High dense cell design for extremely low RDS(ON).Lead free product is acquired.DRugged and reliable.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 4.8 ADrain Current-Pulsed a IDM 20 AMaximum Power Dissipation PD 1.25 WOperating and Store Temperature Range TJ,Tstg -55 to 150 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Ambient b RJA 100 C/WRev 1. 2005.December http://www.cetsemi.com1CES2316Electrical Characteristics TA = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitsOff