ceu14g04 ced14g04.pdf datasheet:

CED14G04/CEU14G04N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES40V, 125A, RDS(ON) = 3.8m @VGS = 10V. RDS(ON) = 6.8m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 40 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 125 ADrain Current-Pulsed a IDM 500 AMaximum Power Dissipation @ TC = 25 C 83 WPD- Derate above 25 C 0.55 W/ COperating and Store Temperature Range TJ,Tstg -55 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 1.8 C/WThermal Resistance, Junction-to-