ceu6060n ced6060n.pdf datasheet:

CED6060N/CEU6060NN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 34A, RDS(ON) = 25m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source Voltage VDS 60 VGate-Source Voltage VGS 20 VDrain Current-Continuous ID 34 ADrain Current-Pulsed a IDM 136 AMaximum Power Dissipation @ TC = 25 C 62.5 WPD- Derate above 25 C 0.42 W/ COperating and Store Temperature Range TJ,Tstg -65 to 175 CThermal CharacteristicsParameter Symbol Limit UnitsThermal Resistance, Junction-to-Case RJC 2.4 C/WThermal Resistance, Junction-to-Ambient RJA 50 C/WRev 1. 2008.Sep.Detail