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cmpta14e.pdf datasheet:

cmpta14ecmpta14e

CMPTA14Ewww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNT NPNDESCRIPTION:SILICON DARLINGTON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPTA14E is an Enhanced version of the CMPTA14 NPN Darlington Transistor. This device is manufactured by the epitaxial planar process, epoxy molded in a surface mount SOT-23 package, designed for applications requiring extremely high gain.MARKING CODE: C1NEFEATURED ENHANCED SPECIFICATIONS: BVCBO from 30V min to 40V min.SOT-23 CASE VCE(SAT) from 1.5V max to 1.0V max. hFE from 10K min to 30K min.MAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCES 40 VEmitter-Base Voltage VEBO 10VContinuous Collector Current IC 500 mAPower Dissipation PD 350 mWOperating and Storage Junction Temperature TJ, Tstg -65 to +150 CThermal Resistance JA

 

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