dmp31d0ufb4.pdf datasheet:

A Product Line ofDiodes IncorporatedDMP31D0UFB430V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 thirteen times smaller than SOT23 Max ID 0.4mm profile ideal for low profile applications V(BR)DSS Max RDS(on) @ TA = 25C Low Gate Threshold Voltage Fast Switching Speed 1 @ VGS = -4.5V -0.76A ESD Protected Gate 2KV -30V 1.5 @ VGS = -2.5V -0.62A Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 2 @ VGS = -1.8V -0.54A Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: X2-DFN1006-3(RDS(on)) and yet maintain superior switching performance, making it Case Material: Molded Plastic,