ech8410.pdf datasheet:

ECH8410Ordering number : ENA1331SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8410ApplicationsFeatures Low ON-resistance. 4V drive. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 12 ADrain Current (Pulse) IDP PW10s, duty cycle1% 60 AAllowable Power Dissipation PD When mounted on ceramic substrate (900mm20.8mm) 1.6 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 VZero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 AGate-to-Source Leakage C

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