ech8419.pdf datasheet:

ECH8419Ordering number : ENA1886SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8419ApplicationsFeatures ON-resistance RDS(on)1=13m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 9 ADrain Current (Pulse) IDP PW10s, duty cycle1% 40 AAllowable Power Dissipation PD When mounted on ceramic substrate (900mm20.8mm) 1.5 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CPackage DimensionsProduct & Package Informationunit : mm (typ) Package : ECH87011A-002 JEITA, JEDEC : - Minimum Packing Quantity : 3,000 pcs./reelTop View2.9 Packing Type : TL Marking0.158 5KZ0