ech8672.pdf datasheet:

ECH8672Ordering number : ENA1465SANYO SemiconductorsDATA SHEETP-Channel Silicon MOSFETGeneral-Purpose Switching DeviceECH8672ApplicationsFeatures 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS --20 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID --3.5 ADrain Current (Pulse) IDP PW10s, duty cycle1% --30 AAllowable Power Dissipation PD When mounted on ceramic substrate (1200mm20.8mm) 1unit 1.3 WTotal Power Dissipation PT When mounted on ceramic substrate (1200mm20.8mm) 1.5 WChannel Temperature Tch 150 CStorage Temperature Tstg --55 to +150 CElectrical Characteristics at Ta=25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Sourc

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