fda28n50f.pdf datasheet:

November 2008UniFETTMFDA28N50FN-Channel MOSFET 500V, 28A, 0.175Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 14A These N-Channel enhancement mode power field effect transistors are produced using Failchilds proprietary, planar Low Gate Charge ( Typ. 80nC)stripe, DMOS technology. Low Crss ( Typ. 38pF)This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switchingperformance, and withstand high energy pulse in the avalanche 100% Avalanche Testedand commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt Capabilitycorrection. RoHS CompliantDGTO-3PNG D SSMOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings UnitsVDSS Dr