fda38n30.pdf datasheet:

May 2010UniFETTMFDA38N30N-Channel MOSFET300V, 38A, 0.085Features Description RDS(on) = 0.07 ( Typ.) @ VGS = 10V, ID = 19A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 60 nC)DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to mini- Fast switchingmize on-state resistance, provide superior switching perfor- 100% avalanche testedmance, and withstand high energy pulse in the avalanche and Improved dv/dt capabilitycommutation mode. These devices are well suited for high effi- ESD Improved capabilitycient switched mode power supplies and active power factor RoHS Compliantcorrection.DGTO-3PNG D SFDA SeriesSMOSFET Maximum Ratings TC = 25oC unless otherwis