fdmc7200.pdf datasheet:

June 2009FDMC7200Dual N-Channel PowerTrench MOSFET 30 V, 12 m and 23.5 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node Max rDS(on) = 23.5 m at VGS = 10 V, ID = 6 Ahas been internally connected to enable easy placement and Max rDS(on) = 38 m at VGS = 4.5 V, ID = 5 Arouting of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been Q2: N-Channeldesigned to provide optimal power efficiency. Max rDS(on) = 12 m at VGS = 10 V, ID = 8 A Max rDS(on) = 18 m at VGS = 4.5 V, ID = 7 AApplications RoHS Compliant Mobile Computing Mobile Internet Devices General Purpose Point of LoadD1D1Q2D1 Q2S2 D15 45 4Pin 1 G1D1D1S26 36 3D2/S1S2 D17 27 2S2G1G28 1S2