fdmc86102.pdf datasheet:

July 2009FDMC86102N-Channel Power Trench MOSFET 100 V, 20 A, 24 mFeatures General Description Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 38 m at VGS = 6 V, ID = 5 Abeen especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in Power 33 yet maintain superior switching performance. 100% UIL Tested RoHS CompliantApplication DC - DC ConversionBottomTopPin 1SD 5 4 GSSGD 6 3 SD 7 2 SDDD 8 1 SDDPower 33MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings UnitsVDS Drain to Source Voltage 100 VVGS Gate to Source Voltage 20 VDrain Current -Continuous (Package limited) TC = 25 C 20-Continuous (Silicon limited) TC = 25 C 29ID A